About: Parasitic structure     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:WikicatElectricalCircuits, within Data Space : dbpedia.demo.openlinksw.com associated with source document(s)
QRcode icon
http://dbpedia.demo.openlinksw.com/describe/?url=http%3A%2F%2Fdbpedia.org%2Fresource%2FParasitic_structure&invfp=IFP_OFF&sas=SAME_AS_OFF&graph=http%3A%2F%2Fdbpedia.org&graph=http%3A%2F%2Fdbpedia.org

In a semiconductor device, a parasitic structure is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range. For example, the internal structure of an NPN bipolar transistor resembles two PN junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector.

AttributesValues
rdf:type
rdfs:label
  • Parasitic structure (en)
rdfs:comment
  • In a semiconductor device, a parasitic structure is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range. For example, the internal structure of an NPN bipolar transistor resembles two PN junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector. (en)
dcterms:subject
Wikipage page ID
Wikipage revision ID
Link from a Wikipage to another Wikipage
Link from a Wikipage to an external page
sameAs
dbp:wikiPageUsesTemplate
has abstract
  • In a semiconductor device, a parasitic structure is a portion of the device that resembles in structure some other, simpler semiconductor device, and causes the device to enter an unintended mode of operation when subjected to conditions outside of its normal range. For example, the internal structure of an NPN bipolar transistor resembles two PN junction diodes connected together by a common anode. In normal operation the base-emitter junction does indeed form a diode, but in most cases it is undesirable for the base-collector junction to behave as a diode. If a sufficient forward bias is placed on this junction it will form a parasitic diode structure, and current will flow from base to collector. A common parasitic structure is that of an SCR. Once triggered, an SCR conducts for as long as there is a current, necessitating a complete power-down to reset the behavior of the device. This condition is known as latchup. (en)
gold:hypernym
prov:wasDerivedFrom
page length (characters) of wiki page
foaf:isPrimaryTopicOf
is Link from a Wikipage to another Wikipage of
is Wikipage redirect of
is foaf:primaryTopic of
Faceted Search & Find service v1.17_git139 as of Feb 29 2024


Alternative Linked Data Documents: ODE     Content Formats:   [cxml] [csv]     RDF   [text] [turtle] [ld+json] [rdf+json] [rdf+xml]     ODATA   [atom+xml] [odata+json]     Microdata   [microdata+json] [html]    About   
This material is Open Knowledge   W3C Semantic Web Technology [RDF Data] Valid XHTML + RDFa
OpenLink Virtuoso version 08.03.3330 as of Mar 19 2024, on Linux (x86_64-generic-linux-glibc212), Single-Server Edition (378 GB total memory, 58 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software