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Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).

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rdf:type
rdfs:label
  • Selenur de gal·li d'indi coure (ca)
  • Kupfer-Indium-Gallium-Diselenid (de)
  • CIGS (es)
  • Copper indium gallium selenide (en)
  • Séléniure de cuivre, d'indium et de gallium (fr)
  • Seleniuro di rame indio e gallio (it)
  • セレン化銅インジウムガリウム (ja)
  • 셀레늄화구리인듐갈륨 (ko)
  • Koper-indium-galliumselenide (nl)
  • Селенид меди-индия-галлия (ru)
rdfs:comment
  • Copper indium gallium (di)selenide (CIGS) is a I-III-VI2 semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn1−xGaxSe2, where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide). (en)
  • CIGS, es el acrónimo en inglés de Copper indium gallium selenide (CuInGaSe2), un material semiconductor compuesto de Cobre, Indio, Galio y Selenio. Es utilizado sobre todo por su alta eficiencia fotovoltaica para construir paneles solares, y por su menor coste con respecto del Silicio Metalúrgico. (es)
  • 구리-인듐-갈륨-셀레나이드(Copper indium gallium selenide, CIGS) 또는 구리-인듐-갈륨-셀레늄화물(셀레늄화구리인듐갈륨)은 구리, 인듐, 갈륨 및 셀레늄으로 구성된 I-III-VI2 반도체 소재이다. 이 소재는 구리-인듐-셀레나이드(종종 "CIS"로 약칭 됨) 및 구리-갈륨-셀레나이드의 고용체이다. 이 (Selenide)인 화합물은 친환경적인 전기 생산기술과 매우 관련있는 것으로 알려져있다. 한편 생화학적인 물질대사의 효소와 관련해서 셀레늄화물(셀레나이드)은 ATP 과정에서 물과 함께 중요한 역할을 하는 셀레노아미노산 대사작용(selenoamino acid metabolism)의 화학반응 촉매 효소에 관여하는 것으로 알려져있다. (ko)
  • セレン化銅インジウムガリウム (CIGS) は銅、インジウム、ガリウム、セレンからなるI-III-VI2半導体。原料はセレン化銅インジウム(しばしばCISと略される)とセレン化銅ガリウムの固溶体である。化学式はCuIn(1-x)Ga(x)Se2でありxの値は1(純粋なセレン化銅インジウム)から0(純粋なセレン化銅)まで変化することができる。CIGSはカルコパイライト結晶構造を有する四面体結合半導体であり、約1.0eV(セレン化銅インジウムの場合)から約1.7eV(セレン化銅ガリウムの場合)まで連続的に変化するバンドギャップを有する。 (ja)
  • Селенид меди-индия-галлия (также CIGS — англ. Copper indium gallium selenide) — полупроводниковое соединение меди, индия, галлия и селена. Представляет собой твердый раствор селенида меди-индия (CIS) и селенида меди-галлия, состав которого выражается формулой CuInxGa1−xSe2. Кристаллизуется в структуре типа халькопирита. Ширина запрещённой зоны меняется от 1,7 эВ при x=0 до 1,0 эВ при x=1. (ru)
  • Kupfer-Indium-Gallium-Diselenid (Kurzbezeichnung CIGS, chemische Formel CuInxGa(1−x)Se2) ist ein I-III-VI-Verbindungshalbleiter bestehend aus Kupfer (Cu), Indium (In), Gallium (Ga) und Selen (Se). Es ist ein Mischkristall und besteht aus den beiden Ausgangssubstanzen , oft auch als CIS bezeichnet, und , oft auch als CGS bezeichnet. Die chemische Bindung ist wegen ihres Kristallaufbaues den Chalkopyriten mit der Raumgruppe I42d (Raumgruppen-Nr. 122) zugeordnet. Über das Mischungsverhältnis der beiden Ausgangssubstanzen, ausgedrückt durch den Faktor x in der chemischen Bezeichnung, der im Bereich 0 bis 1 liegen kann, können verschiedene Stoffeigenschaften beeinflusst werden. So beträgt der Bandabstand je nach Mischungsverhältnis 1,02 eV für x = 1 (reines Kupfer-Indium-Diselenid) bis 1,7 eV f (de)
  • Le séléniure de cuivre, d'indium et de gallium, souvent abrégé CIGS, de l'anglais copper indium gallium selenide, est un composé chimique de formule générique CuInxGa1-xSe2. C'est un semi-conducteur à gap direct constitué de cuivre, d'indium, de gallium et de sélénium. Il s'agit d'une solution solide de CIS (copper indium selenide, x = 1) et de CGS (copper gallium selenide, x = 0). Sa structure cristalline est semblable à celle de la chalcopyrite, dans le groupe d'espace I42d (no 122), avec une largeur de bande interdite variant de manière continue de 1,02 eV pour le CIS à 1,7 eV pour le CGS. (fr)
  • Il copper indium gallium (di)selenide (CIGS), ossia (di)seleniuro di rame indio gallio (Numero CAS: 12018-95-0), è un materiale semiconduttore del I-III-VI2, composto di rame, indio, gallio e selenio. Il materiale a temperatura ambiente si presenta come una soluzione solida di di-seleniuro di rame e indio (spesso abbreviata "CIS") e di diseleniuro di rame e gallio, con una formula chimica bruta di CuInxGa(1-x)Se2, dove il valore di "x" può variare da 1 (seleniuro di rame-indio puro) fino a 0 (seleniuro puro di rame-gallio). (it)
  • Koper-indium-galliumselenide of CIGS (van het Engelse copper indium gallium selenide) is een halfgeleidermateriaal voor de productie van zonnecellen dat bestaat uit koper, indium, gallium en seleen. De algemene brutoformule is CuInxGa(1-x)Se2. De belangrijkste vijf CIGS-bedrijven zijn , , , en . (nl)
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