Gérald Bastard (born 3 April 1950 in Paris) is a highly cited French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris. In 2000, Bastard and won the International Symposium on Compound SemiconductorsQuantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)".
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| - Gérald Bastard (de)
- Gérald Bastard (en)
- Gérald Bastard (fr)
- Gérald Bastard (pt)
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| - Gérald Bastard (born 3 April 1950 in Paris) is a highly cited French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris. In 2000, Bastard and won the International Symposium on Compound SemiconductorsQuantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)". (en)
- Gérald Bastard est un physicien français né le 3 avril 1950 à Paris. (fr)
- Gérald Bastard (Paris, 3 de abril de 1950) é um físico francês. É conhecido por seu trabalho sobre heterojunção de semicondutores. É diretor de pesquisas do Departamento de Física da Escola Normal Superior de Paris. Recebeu em 2000 com o International Symposium on Compound Semiconductors Quantum Device Award. Recebeu o Prêmio Welker de 2014. (pt)
- Gérald Bastard (* 3. April 1950 in Paris) ist ein französischer Experimentalphysiker (Festkörperphysik, Halbleiter-Heterostrukturen). Bastard ist Forschungsdirektor des CNRS an der École normale supérieure (Paris) (ENS). (de)
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| - Gérald Bastard (* 3. April 1950 in Paris) ist ein französischer Experimentalphysiker (Festkörperphysik, Halbleiter-Heterostrukturen). Bastard ist Forschungsdirektor des CNRS an der École normale supérieure (Paris) (ENS). 1987 erhielt er den Prix Louis Ancel. 2000 erhielt er mit den ersten Quantum Devices Award der International Symposium on Compound Semiconductors für „Pionierarbeiten zu durch elektrische Felder induzierten optischen Effekten in Quantentöpfen und Supergittern (quantum-confined Stark effect, Wannier–Stark-Lokalisierung)“ (Laudatio). 2014 erhielt er den Welker Award. Er gehört zu den hochzitierten Wissenschaftlern. (de)
- Gérald Bastard (born 3 April 1950 in Paris) is a highly cited French physicist known for his work on semiconductor heterostructures. As of 2011, he is a research director at the Department of Physics of the École Normale Supérieure in Paris. In 2000, Bastard and won the International Symposium on Compound SemiconductorsQuantum Device Award "for pioneering work on electric-field induced optic effects in quantum wells and superlattices (quantum-confined Stark effect and Wannier–Stark localization)". (en)
- Gérald Bastard est un physicien français né le 3 avril 1950 à Paris. (fr)
- Gérald Bastard (Paris, 3 de abril de 1950) é um físico francês. É conhecido por seu trabalho sobre heterojunção de semicondutores. É diretor de pesquisas do Departamento de Física da Escola Normal Superior de Paris. Recebeu em 2000 com o International Symposium on Compound Semiconductors Quantum Device Award. Recebeu o Prêmio Welker de 2014. (pt)
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