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Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C.

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rdf:type
rdfs:label
  • Sulfid hafničitý (cs)
  • Hafnium(IV)-sulfid (de)
  • Hafnium disulfide (en)
  • 硫化ハフニウム(IV) (ja)
  • Дисульфид гафния (ru)
  • 二硫化铪 (zh)
rdfs:comment
  • Sulfid hafničitý je anorganická sloučenina hafnia a síry. Jedná se o vrstevnatý dichalkogenid s chemickým vzorcem HfS2. Několik atomárních vrstev tohoto materiálu lze exfoliovat a použít pro výrobu tranzistoru řízeného elektrickým polem. Práškový sulfid hafničitý lze vyrobit reakcí sulfanu a oxidů hafnia při 500–1300 °C. (cs)
  • Hafnium(IV)-sulfid, HfS2, ist eine anorganische Verbindung des Hafniums aus der Gruppe der Sulfide. (de)
  • Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C. (en)
  • 硫化ハフニウム(IV)（りゅうかハフニウム よん、英: hafnium(IV) sulfide）はハフニウムの硫化物で、組成式が HfS2 と表される紫褐色の固体である。一般的には二硫化ハフニウムと呼ばれる。 (ja)
  • Дисульфид гафния — неорганическое соединение, соль гафния и сероводородной кислоты с формулой HfS2,коричневые кристаллы. (ru)
  • 二硫化铪是一种无机化合物，化学式为HfS2，是一种层状的二硫化物。通过胶带法（参见石墨烯的制备）可以将其剥离数个原子层的厚度，用于制造场效应晶体管。液相剥离法也可高产率地得到HfS2薄片。它可由硫化氢和氧化铪在500–1300 °C反应得到。 HfO2+2 H2S→HfS2+H2O (zh)
foaf:name
  • Hafnium disulfide (en)
name
  • Hafnium disulfide (en)
foaf:depiction
  • http://commons.wikimedia.org/wiki/Special:FilePath/HfS2chips.jpg
  • http://commons.wikimedia.org/wiki/Special:FilePath/HfS2_structure.png
dcterms:subject
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thumbnail
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  • HfS2 structure.png (en)
  • HfS2chips.jpg (en)
imagesize
IUPACName
  • Hafnium disulfide (en)
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  • changed (en)
verifiedrevid
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  • changed (en)
has abstract
  • Sulfid hafničitý je anorganická sloučenina hafnia a síry. Jedná se o vrstevnatý dichalkogenid s chemickým vzorcem HfS2. Několik atomárních vrstev tohoto materiálu lze exfoliovat a použít pro výrobu tranzistoru řízeného elektrickým polem. Práškový sulfid hafničitý lze vyrobit reakcí sulfanu a oxidů hafnia při 500–1300 °C. (cs)
  • Hafnium(IV)-sulfid, HfS2, ist eine anorganische Verbindung des Hafniums aus der Gruppe der Sulfide. (de)
  • Hafnium disulfide is an inorganic compound of hafnium and sulfur. It is a layered dichalcogenide with the chemical formula is HfS2. A few atomic layers of this material can be exfoliated using the standard Scotch Tape technique (see graphene) and used for the fabrication of a field-effect transistor. High-yield synthesis of HfS2 has also been demonstrated using liquid phase exfoliation, resulting in the production of stable few-layer HfS2 flakes. Hafnium disulfide powder can be produced by reacting hydrogen sulfide and hafnium oxides at 500–1300 °C. (en)
  • 硫化ハフニウム(IV)（りゅうかハフニウム よん、英: hafnium(IV) sulfide）はハフニウムの硫化物で、組成式が HfS2 と表される紫褐色の固体である。一般的には二硫化ハフニウムと呼ばれる。 (ja)
  • Дисульфид гафния — неорганическое соединение, соль гафния и сероводородной кислоты с формулой HfS2,коричневые кристаллы. (ru)
  • 二硫化铪是一种无机化合物，化学式为HfS2，是一种层状的二硫化物。通过胶带法（参见石墨烯的制备）可以将其剥离数个原子层的厚度，用于制造场效应晶体管。液相剥离法也可高产率地得到HfS2薄片。它可由硫化氢和氧化铪在500–1300 °C反应得到。 HfO2+2 H2S→HfS2+H2O (zh)
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IUPAC name
  • Hafnium disulfide (en)
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