Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. Ion optics (such as radio frequency quadrupoles) can be mass selective. In IBD they are used to select a single, or a range of ion species for deposition in order to avoid contamination. For organic materials in particular, this process is often monitored by a mass spectrometer.
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| - Ion beam deposition (en)
- 이온 빔 퇴적물 (ko)
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| - 이온 빔 퇴적물(Ion beam deposition, IBD)은 이온 빔의 적용을 통해 표적 물질을 도포하는 과정이다. 이온 빔 퇴적물 장치는 일반적으로 이온원, 이온 광학계 및 퇴적물 표적으로 이루어져 있다. 선택적으로, 질량 분석기는 통합될수 있다. 원자 이온 IBD, , 필드 이온화또는 음극 아크 퇴적물 소스가 사용된다. 음극 아크 소스는 특히 탄소 이온 퇴적물에서 사용된다. 분자 이온 빔 퇴적물은 또는 MALDI 소스를 이용한다. (ko)
- Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. Ion optics (such as radio frequency quadrupoles) can be mass selective. In IBD they are used to select a single, or a range of ion species for deposition in order to avoid contamination. For organic materials in particular, this process is often monitored by a mass spectrometer. (en)
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| - Ion beam deposition (IBD) is a process of applying materials to a target through the application of an ion beam. An ion beam deposition apparatus typically consists of an ion source, ion optics, and the deposition target. Optionally a mass analyzer can be incorporated. In the ion source source materials in the form of a gas, an evaporated solid, or a solution (liquid) are ionized. For atomic IBD, electron ionization, field ionization or cathodic arc sources are employed. Cathodic arc sources are used particularly for carbon ion deposition. Molecular ion beam deposition employs electrospray ionization or MALDI sources. The ions are then accelerated, focused or deflected using high voltages or magnetic fields. Optional deceleration at the substrate can be employed to define the deposition energy. This energy usually ranges from a few eV up to a few keV. At low energy molecular ion beams are deposited intact (ion soft landing), while at a high deposition energy molecular ions fragment and atomic ions can penetrate further into the material, a process known as ion implantation. Ion optics (such as radio frequency quadrupoles) can be mass selective. In IBD they are used to select a single, or a range of ion species for deposition in order to avoid contamination. For organic materials in particular, this process is often monitored by a mass spectrometer. The ion beam current, which is quantitative measure for the deposited amount of material, can be monitored during the deposition process. Switching of the selected mass range can be used to define a stoichiometry. (en)
- 이온 빔 퇴적물(Ion beam deposition, IBD)은 이온 빔의 적용을 통해 표적 물질을 도포하는 과정이다. 이온 빔 퇴적물 장치는 일반적으로 이온원, 이온 광학계 및 퇴적물 표적으로 이루어져 있다. 선택적으로, 질량 분석기는 통합될수 있다. 원자 이온 IBD, , 필드 이온화또는 음극 아크 퇴적물 소스가 사용된다. 음극 아크 소스는 특히 탄소 이온 퇴적물에서 사용된다. 분자 이온 빔 퇴적물은 또는 MALDI 소스를 이용한다. (ko)
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