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About: Low-energy plasma-enhanced chemical vapor deposition     Goto   Sponge   NotDistinct   Permalink

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Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe alloys) films. A remote low energy, high density DC argon plasma is employed to efficiently decompose the gas phase precursors while leaving the epitaxial layer undamaged, resulting in high quality epilayers and high deposition rates (up to 10 nm/s).