• Facets (new session)
• Description
• Metadata
• Settings
  • Rule: ActivityStreamsMapasEquivalentb3sb3sifpdbprdf-labelfacetshttp://dbpedia.org/resource/inference/rules/dbpedia#http://dbpedia.org/resource/inference/rules/opencyc#http://dbpedia.org/resource/inference/rules/umbel#http://dbpedia.org/resource/inference/rules/yago#http://dbpedia.org/schema/property_rules#http://www.ontologyportal.org/inference/rules/SUMO#http://www.ontologyportal.org/inference/rules/WordNet#http://www.w3.org/2002/07/owl#ldpoplwebskos-transurn:det:rdf:labelvirtrdf-labelvirtrdf-urlNone
    
  • Inverse Functional Properties: Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects
  • "Same As": Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects (recommended) Apply to subjects, objects and predicates (not recommended on big datasets) Apply to predicates only (special use cases only)

About: MASTAR MOSFET Model     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:Whole100003553, within Data Space : dbpedia.demo.openlinksw.com associated with source document(s)

Type: personyago:WikicatTransistorsyago:Artifact100021939yago:Conductor103088707yago:Device103183080yago:Instrumentality103575240yago:Object100002684yago:PhysicalEntity100001930yago:SemiconductorDevice104171831yago:Transistor104471632yago:Whole100003553 New Facet based on Instances of this Class

The MASTAR (Model for Analog Simulation of subThreshold, saturation and weak Avalanche Regions)is an analytical model of Metal-Oxide Semiconductor Field-Effect Transistors, developed using the voltage-doping transformation (VDT) technique. MASTAR offers good accuracy and continuity in current and its derivatives in all operation regimes of the MOSFET devices. The model has been successfully used in CAD/EDA simulation tools.