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Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code (ECC), and writing the corrected data back to the same location. Due to the high integration density of modern computer memory chips, the individual memory cell structures became small enough to be vulnerable to cosmic rays and/or alpha particle emission. The errors caused by these phenomena are called soft errors. Over 8% of DIMM modules experience at least one correctable error per year. This can be a problem for DRAM and SRAM based memories. The probability of a soft error at any individual memory bit is very small. However, together with the large amount of memory modern computers‍—‌especially servers‍—‌are equipped with, and together with extended perio

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  • Memory scrubbing (en)
  • 内存刷洗 (zh)
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  • 内存刷洗（英語：Memory scrubbing）也可称内存擦洗、内存清洗，它是指从每个電腦記憶體位置读取数据、以一种错误纠错码（ECC）纠正位元错误（如果存在），然后将校正后的数据写回到相同位置。 由于现代计算机内存芯片的高度集成，单个内存单元的结构已足够小到易于受到宇宙射线和/或阿尔法粒子的影响。由这些现象引发的错误被称为軟性錯誤，这对基于DRAM或SRAM的内存来说可能是个问题。在任何单个内存位元发生软错误的概率非常小。但是，配以现代计算机的庞大内存空间，加之长时间持续运行的如服务器，在已安装内存中发生软错误的概率可能比较显著。 纠错内存中的信息被冗余存储，以便能校正每个内存字（word）的单比特错误。也因如此，ECC内存可以支持对内存的刷洗。换句话说，如果内存控制器系统性扫描内存，则可以检测到单比特错误，并可以使用ECC校验和来确定出错的比特并将校正的数据写回内存。 (zh)
  • Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code (ECC), and writing the corrected data back to the same location. Due to the high integration density of modern computer memory chips, the individual memory cell structures became small enough to be vulnerable to cosmic rays and/or alpha particle emission. The errors caused by these phenomena are called soft errors. Over 8% of DIMM modules experience at least one correctable error per year. This can be a problem for DRAM and SRAM based memories. The probability of a soft error at any individual memory bit is very small. However, together with the large amount of memory modern computers‍—‌especially servers‍—‌are equipped with, and together with extended perio (en)
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  • Memory scrubbing consists of reading from each computer memory location, correcting bit errors (if any) with an error-correcting code (ECC), and writing the corrected data back to the same location. Due to the high integration density of modern computer memory chips, the individual memory cell structures became small enough to be vulnerable to cosmic rays and/or alpha particle emission. The errors caused by these phenomena are called soft errors. Over 8% of DIMM modules experience at least one correctable error per year. This can be a problem for DRAM and SRAM based memories. The probability of a soft error at any individual memory bit is very small. However, together with the large amount of memory modern computers‍—‌especially servers‍—‌are equipped with, and together with extended periods of uptime, the probability of soft errors in the total memory installed is significant. The information in an ECC memory is stored redundantly enough to correct single bit error per memory word. Hence, an ECC memory can support the scrubbing of the memory content. Namely, if the memory controller scans systematically through the memory, the single bit errors can be detected, the erroneous bit can be determined using the ECC checksum, and the corrected data can be written back to the memory. (en)
  • 内存刷洗（英語：Memory scrubbing）也可称内存擦洗、内存清洗，它是指从每个電腦記憶體位置读取数据、以一种错误纠错码（ECC）纠正位元错误（如果存在），然后将校正后的数据写回到相同位置。 由于现代计算机内存芯片的高度集成，单个内存单元的结构已足够小到易于受到宇宙射线和/或阿尔法粒子的影响。由这些现象引发的错误被称为軟性錯誤，这对基于DRAM或SRAM的内存来说可能是个问题。在任何单个内存位元发生软错误的概率非常小。但是，配以现代计算机的庞大内存空间，加之长时间持续运行的如服务器，在已安装内存中发生软错误的概率可能比较显著。 纠错内存中的信息被冗余存储，以便能校正每个内存字（word）的单比特错误。也因如此，ECC内存可以支持对内存的刷洗。换句话说，如果内存控制器系统性扫描内存，则可以检测到单比特错误，并可以使用ECC校验和来确定出错的比特并将校正的数据写回内存。 (zh)
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