RF Micropower is a fabless semiconductor company based in Phoenix, Arizona that sells and licenses the RFuP technology that was initially developed by SJT Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps which allows high levels of monolithic integration. These power transistors can operate at voltages that are 20 times higher than the baseline CMOS transistors and at several Watts of power. The technology has been implemented in various integrated circuit solutions including RF power amplifiers and power regulation circuits. According to their website, they have demonstrated Si-MESFETs at the 350 nm, 250 nm, 150 nm, 45
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| - RF Micropower is a fabless semiconductor company based in Phoenix, Arizona that sells and licenses the RFuP technology that was initially developed by SJT Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps which allows high levels of monolithic integration. These power transistors can operate at voltages that are 20 times higher than the baseline CMOS transistors and at several Watts of power. The technology has been implemented in various integrated circuit solutions including RF power amplifiers and power regulation circuits. According to their website, they have demonstrated Si-MESFETs at the 350 nm, 250 nm, 150 nm, 45 (en)
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| - Si-MESFETs, Discrete Power transistors, RF power amplifiers, Low-dropout regulators, PLLs for Medical Implant Communication Service Band (en)
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| - RF Micropower is a fabless semiconductor company based in Phoenix, Arizona that sells and licenses the RFuP technology that was initially developed by SJT Micropower, Inc. The company's proprietary technology enables high voltage Si-MESFET transistors to be fabricated on commercial SOI CMOS processes without altering the native process or adding additional fabrication steps which allows high levels of monolithic integration. These power transistors can operate at voltages that are 20 times higher than the baseline CMOS transistors and at several Watts of power. The technology has been implemented in various integrated circuit solutions including RF power amplifiers and power regulation circuits. According to their website, they have demonstrated Si-MESFETs at the 350 nm, 250 nm, 150 nm, 45 nm and 32 nm process nodes. The smallest process node for MESFETs on any type of substrate is currently 32 nm. (en)
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