In a basic Schottky-junction (Schottky-barrier) solar cell, an interface between a metal and a semiconductor provides the band bending necessary for charge separation. Traditional solar cells are composed of p-type and n-type semiconductor layers sandwiched together, forming the source of built-in voltage (a p-n junction). Due to differing energy levels between the Fermi level of the metal and the conduction band of the semiconductor, an abrupt potential difference is created, instead of the smooth band transition observed across a p-n junction in a standard solar cell, and this is a Schottky height barrier. Although vulnerable to higher rates of thermionic emission, manufacturing of Schottky barrier solar cells proves to be cost-effective and industrially scalable.
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| - ショットキー接合太陽電池 (ja)
- Schottky junction solar cell (en)
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| - ショットキー接合太陽電池またはショットキー型太陽電池は、ショットキー接合を使用して光から電気に変換する効率を高める太陽電池。 (ja)
- In a basic Schottky-junction (Schottky-barrier) solar cell, an interface between a metal and a semiconductor provides the band bending necessary for charge separation. Traditional solar cells are composed of p-type and n-type semiconductor layers sandwiched together, forming the source of built-in voltage (a p-n junction). Due to differing energy levels between the Fermi level of the metal and the conduction band of the semiconductor, an abrupt potential difference is created, instead of the smooth band transition observed across a p-n junction in a standard solar cell, and this is a Schottky height barrier. Although vulnerable to higher rates of thermionic emission, manufacturing of Schottky barrier solar cells proves to be cost-effective and industrially scalable. (en)
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| - In a basic Schottky-junction (Schottky-barrier) solar cell, an interface between a metal and a semiconductor provides the band bending necessary for charge separation. Traditional solar cells are composed of p-type and n-type semiconductor layers sandwiched together, forming the source of built-in voltage (a p-n junction). Due to differing energy levels between the Fermi level of the metal and the conduction band of the semiconductor, an abrupt potential difference is created, instead of the smooth band transition observed across a p-n junction in a standard solar cell, and this is a Schottky height barrier. Although vulnerable to higher rates of thermionic emission, manufacturing of Schottky barrier solar cells proves to be cost-effective and industrially scalable. However, research has shown thin insulating layers between metal and semiconductors improve solar cell performance, generating interest in metal-insulator-semiconductor Schottky junction solar cells. A thin insulating layer, such as silicon dioxide, can reduce rates of electron-hole pair recombination and dark current by allowing the possibility of minority carriers to tunnel through this layer. The Schottky-junction is an attempt to increase the efficiency of solar cells by introducing an impurity energy level in the band gap. This impurity can absorb more lower energy photons, which improves the power conversion efficiency of the cell. This type of solar cell allows enhanced light trapping and faster carrier transport compared to more conventional photovoltaic cells. (en)
- ショットキー接合太陽電池またはショットキー型太陽電池は、ショットキー接合を使用して光から電気に変換する効率を高める太陽電池。 (ja)
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