The Silsbee effect or Silsbee current refers to the effect by which, if the current exceeds a critical level, the superconducting state will be destroyed. The size of the critical current (which can be as large as 100 amp in a 1-mm wire) depends on the nature and geometry of the specimen and is related to whether the magnetic field produced by the current exceeds the critical field at the surface of the superconductor.
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| - Silsbee-Effekt (de)
- Silsbee effect (en)
- 西尔斯比效应 (zh)
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| - Als Silsbee-Effekt, auch silsbeesche Hypothese genannt (nach ), wird der Zusammenbruch des supraleitenden Zustands bei hohen Stromstärken in einem Typ-I-Supraleiter bezeichnet, dessen Radius größer als die Londonsche Eindringtiefe ist. (de)
- The Silsbee effect or Silsbee current refers to the effect by which, if the current exceeds a critical level, the superconducting state will be destroyed. The size of the critical current (which can be as large as 100 amp in a 1-mm wire) depends on the nature and geometry of the specimen and is related to whether the magnetic field produced by the current exceeds the critical field at the surface of the superconductor. (en)
- 西尔斯比效应(英語:Silsbee effect),或西尔斯比定则(Silsbee rule),是弗朗西斯·B·西尔斯比(Francis B. Silsbee)在1916年发表的一个关于超导的结论:对于第一类超导体,超导临界电流在超导体表面产生的磁场强度等于超导临界磁场。大于临界值的磁场会破坏超导态;大于临界值的电流也会破坏超导体的超导状态。临界电流的大小取决于材料的种类以及几何形状(对于截面半径为1毫米的导线,临界电流可达100安培)。 (zh)
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| - Als Silsbee-Effekt, auch silsbeesche Hypothese genannt (nach ), wird der Zusammenbruch des supraleitenden Zustands bei hohen Stromstärken in einem Typ-I-Supraleiter bezeichnet, dessen Radius größer als die Londonsche Eindringtiefe ist. (de)
- The Silsbee effect or Silsbee current refers to the effect by which, if the current exceeds a critical level, the superconducting state will be destroyed. The size of the critical current (which can be as large as 100 amp in a 1-mm wire) depends on the nature and geometry of the specimen and is related to whether the magnetic field produced by the current exceeds the critical field at the surface of the superconductor. (en)
- 西尔斯比效应(英語:Silsbee effect),或西尔斯比定则(Silsbee rule),是弗朗西斯·B·西尔斯比(Francis B. Silsbee)在1916年发表的一个关于超导的结论:对于第一类超导体,超导临界电流在超导体表面产生的磁场强度等于超导临界磁场。大于临界值的磁场会破坏超导态;大于临界值的电流也会破坏超导体的超导状态。临界电流的大小取决于材料的种类以及几何形状(对于截面半径为1毫米的导线,临界电流可达100安培)。 (zh)
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