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The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function. It is often used to describe electron transport in structurally disordered semiconductors such a hydrogenated amorphous silicon.

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  • アーバック則 (ja)
  • Urbach energy (en)
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  • The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function. It is often used to describe electron transport in structurally disordered semiconductors such a hydrogenated amorphous silicon. (en)
  • アーバック則(アーバックそく、Urbach rule)とは、励起子による吸収スペクトルにおいて、低エネルギー側の指数関数的に減少するスペクトル形状を表した次の式をいう。 ここでσはスティープネス因子と呼ばれる大体 1 程度の大きさの物質定数、E0 は各温度の低エネルギー側尾部の延長線が一点に収束するエネルギーであって、おおよそ吸収ピークエネルギーに等しい。 吸収線のピーク部および高エネルギー側尾部ではローレンツ関数で表されるが、低エネルギー側尾部では、吸収スペクトルはアーバック則に従う物質が多い。 (ja)
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  • The Urbach Energy, or Urbach Edge, is a parameter typically denoted , with dimensions of energy, used to quantify energetic disorder in the band edges of a semiconductor. It is evaluated by fitting the absorption coefficient as a function of energy to an exponential function. It is often used to describe electron transport in structurally disordered semiconductors such a hydrogenated amorphous silicon. (en)
  • アーバック則(アーバックそく、Urbach rule)とは、励起子による吸収スペクトルにおいて、低エネルギー側の指数関数的に減少するスペクトル形状を表した次の式をいう。 ここでσはスティープネス因子と呼ばれる大体 1 程度の大きさの物質定数、E0 は各温度の低エネルギー側尾部の延長線が一点に収束するエネルギーであって、おおよそ吸収ピークエネルギーに等しい。 吸収線のピーク部および高エネルギー側尾部ではローレンツ関数で表されるが、低エネルギー側尾部では、吸収スペクトルはアーバック則に従う物質が多い。 (ja)
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