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About: Indium gallium zinc oxide     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:Whole105869584, within Data Space : dbpedia.demo.openlinksw.com associated with source document(s)

Type: Thingyago:WikicatSemiconductorDeviceMaterialsyago:WikicatSemiconductorMaterialsyago:Abstraction100002137yago:Cognition100023271yago:Compound105870180yago:Concept105835747yago:Content105809192yago:Idea105833840yago:Material114580897yago:Matter100020827yago:Part113809207yago:PhysicalEntity100001930yago:PsychologicalFeature100023100yago:Relation100031921yago:WikicatGalliumCompoundsyago:WikicatIndiumCompoundsyago:WikicatZincCompoundschemical compoundyago:Substance100019613yago:Whole105869584 New Facet based on Instances of this Class

Indium gallium zinc oxide (IGZO) is a semiconducting material, consisting of indium (In), gallium (Ga), zinc (Zn) and oxygen (O). IGZO thin-film transistors (TFT) are used in the TFT backplane of flat-panel displays (FPDs). IGZO-TFT was developed by Hideo Hosono's group at Tokyo Institute of Technology and Japan Science and Technology Agency (JST) in 2003 (crystalline IGZO-TFT) and in 2004 (amorphous IGZO-TFT). IGZO-TFT has 20–50 times the electron mobility of amorphous silicon, which has often been used in liquid-crystal displays (LCDs) and e-papers. As a result, IGZO-TFT can improve the speed, resolution and size of flat-panel displays. It is currently used as the thin-film transistors for use in organic light-emitting diode (OLED) TV displays.