Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. Using zirconium dioxide instead of silicon dioxide, this transistor can reduce the current leakage, and thus reduces power consumption while still working at higher speed and using lower voltages. According to Intel, the new design could use only 0.6 volts. Intel TeraHertz was unveiled in 2001. As of 2015, it is not used in processors.
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- Intel TeraHertz (en)
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| - Intel TeraHertz — наименование технологии Intel для транзисторов. (ru)
- Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. Using zirconium dioxide instead of silicon dioxide, this transistor can reduce the current leakage, and thus reduces power consumption while still working at higher speed and using lower voltages. According to Intel, the new design could use only 0.6 volts. Intel TeraHertz was unveiled in 2001. As of 2015, it is not used in processors. (en)
- Intel TeraHertz fue un concepto de diseño para una nueva generación de transistores, presentado por Intel en 2001. Utilizando nuevos materiales, que lograrían un aumento dramático en la velocidad de operación de dicho transistor, eficiencia energética y reducción del calor producido.Utilizando materiales como el dióxido de zirconio. Los fundamentos en que Intel se basaba para el desarrollo de esta nueva tecnología eran:
* Un nuevo tipo de transistor llamado: "Transistor de sustrato agotado" (empobrecido).
* Compuerta dieléctrica de Alta-K (high k gate dielectric). (es)
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| - Intel TeraHertz was Intel's new design for transistors. It uses new materials such as zirconium dioxide which is a superior insulator reducing current leakages. Using zirconium dioxide instead of silicon dioxide, this transistor can reduce the current leakage, and thus reduces power consumption while still working at higher speed and using lower voltages. One element of this structure is a "depleted substrate transistor," which is a type of CMOS device where the transistor is built in an ultra-thin layer of silicon on top of an embedded layer of insulation. This ultra-thin silicon layer is fully depleted to maximize drive current when the transistor is turned on, allowing the transistor to switch on and off faster. In contrast, when the transistor is turned off, unwanted current leakage is minimized by the thin insulating layer. This allows the depleted substrate transistor to have 100 times less leakage than traditional silicon-on-insulator schemes. Another innovation of Intel's depleted substrate transistor is the use of low resistance contacts on top of the silicon layer. The transistor can therefore be very small, very fast and consume less power. Another important element is the development of a new material that replaces silicon dioxide on the wafer. All transistors have a "gate-dielectric," a material that separates a transistor's "gate" from its active region (the gate controls the on-off state of the transistor). According to Intel, the new design could use only 0.6 volts. Intel TeraHertz was unveiled in 2001. As of 2015, it is not used in processors. (en)
- Intel TeraHertz fue un concepto de diseño para una nueva generación de transistores, presentado por Intel en 2001. Utilizando nuevos materiales, que lograrían un aumento dramático en la velocidad de operación de dicho transistor, eficiencia energética y reducción del calor producido.Utilizando materiales como el dióxido de zirconio. Los fundamentos en que Intel se basaba para el desarrollo de esta nueva tecnología eran:
* Un nuevo tipo de transistor llamado: "Transistor de sustrato agotado" (empobrecido).
* Compuerta dieléctrica de Alta-K (high k gate dielectric). Ambos desarrollos juntos, permitirían crear transistores capaces de operar a frecuencias del orden de los Terahertz. (es)
- Intel TeraHertz — наименование технологии Intel для транзисторов. (ru)
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