About: Monocrystalline silicon

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Monocrystalline silicon, more often called single-crystal silicon, in short mono c-Si or mono-Si, is the base material for silicon-based discrete components and integrated circuits used in virtually all modern electronic equipment. Mono-Si also serves as a photovoltaic, light-absorbing material in the manufacture of solar cells. Monocrystalline silicon differs from other allotropic forms, such as non-crystalline amorphous silicon—used in thin-film solar cells—and polycrystalline silicon, which consists of small crystals known as crystallites.

Attributes	Values
rdf:type	yago:WikicatSemiconductorMaterials yago:WikicatSemiconductors yago:Abstraction100002137 yago:Conductor114821043 yago:Material114580897 yago:Matter100020827 yago:Part113809207 yago:PhysicalEntity100001930 yago:Relation100031921 chemical compound yago:Semiconductor114821248 yago:Substance100019613
rdfs:label	Silici monocristal·lí (ca) Silicio monocristalino (es) Silicio monocristallino (it) Monocrystalline silicon (en) Silício monocristalino (pt) Кристаллический кремний (ru)
rdfs:comment	Il silicio monocristallino è il materiale di base dell'industria elettronica. È costituito da un cristallo singolo di silicio, che ha un reticolo cristallino continuo, senza interruzioni (bordi di grano) in tutto il solido. (it) Кристаллический кремний — основная форма, в которой используется кремний при производстве фотоэлектрических преобразователей и твердотельных электронных приборов методами планарной технологии. Активно развивается использование кремния в виде тонких плёнок (эпитаксиальных слоёв) кристаллической и аморфной структуры на различных подложках. (ru) El silici monocristal·lí (o, en anglès: "single-crystal silicon", "single-crystal Si", "mono c-Si", o mono-Si) és el material base per xip de silici utilitzat en pràcticament tots els equips electrònics d'avui. Mono-Si també serveix com a material fotovoltaic, que absorbeix la llum en la fabricació de cel·les solars, cristal·lita, donant-li al material el seu típic efecte de floc de metall. (ca) El silicio monocristalino, cristal único de Si o mono-SI es el material base de la industria electrónica y está compuesto de silicio en el que la estructura cristalina de la totalidad del sólido es continua, ininterrumpida (sin bordes de grano) a sus bordes. Se puede preparar , es decir, hecho sólo de silicio extremadamente puro, o dopado, que contiene muy pequeñas cantidades de otros elementos añadidos para cambiar de una manera controlada sus propiedades semiconductoras. La mayoría de los monocristales de silicio son cultivados por el proceso Czochralski, en forma de cilindros de hasta 2 m de largo y 45 cm de diámetro, que, cortados en rodajas finas, dan las obleas, en las que se fabrican los microcircuitos. (es) Monocrystalline silicon, more often called single-crystal silicon, in short mono c-Si or mono-Si, is the base material for silicon-based discrete components and integrated circuits used in virtually all modern electronic equipment. Mono-Si also serves as a photovoltaic, light-absorbing material in the manufacture of solar cells. Monocrystalline silicon differs from other allotropic forms, such as non-crystalline amorphous silicon—used in thin-film solar cells—and polycrystalline silicon, which consists of small crystals known as crystallites. (en) O silício monocristalino, cristal único de Si ou mono-SI é um material base da indústria electrónica e está composto de silício no que a estrutura cristalina da totalidade do sólido é contínua, de forma ininterrumpida (sem bordas de grão) a suas bordas. Pode-se preparar intrínseca, isto é, feito só de silício extremamente puro, ou dopado, que contém muito pequenas quantidades de outros elementos acrescentados para mudar de uma maneira controlada as suas propriedades semicondutoras. A maioria dos monocristais de silício são cultivados pelo processo Czochralski, em forma de cilindros de até 2 m de cumprido e 45 cm de diâmetro, que, cortados em rodelas finas, dão as wafers, nas que se fabricam os micro-circuitos. (pt)
foaf:depiction
dct:subject	Group IV semiconductors Crystals Silicon forms Silicon solar cells
Wikipage page ID	18526033 (xsd:integer)
Wikipage revision ID	1112245396 (xsd:integer)
Link from a Wikipage to another Wikipage	Amorphous silicon Group IV semiconductors Quartz Boron Bridgman–Stockbarger technique Crystals Silicon forms Czochralski method VLSI Doping (semiconductor) Integrated circuit Intrinsic semiconductor Copper indium gallium selenide N-type semiconductor Crystal structure Crystallite Crystallographic defect Thin-film deposition Thin-film solar cell Single crystal Photovoltaic Cadmium telluride photovoltaics Photovoltaics Microfabrication Solid-state electronics Wafer (electronics) Ion implantation P-type semiconductor Grain boundary Silicon solar cells Photolithography Diamond cubic Phosphorus Solar cell Solar panel Information technology Intel Carrier generation and recombination Seed crystal Semiconductor Semiconductor device Silicon Etching (microfabrication) Impurity Crystal lattice Zone melting Microelectronic Wafering Polycrystalline silicon Epitaxial growth Discrete component Doping (semiconductors) Solar module Very large-scale integration Allotropic
sameAs	Monocrystalline silicon Monocrystalline silicon Monocrystalline silicon Monocrystalline silicon Monocrystalline silicon Monocrystalline silicon Monocrystalline silicon

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