Robert W. Bower (June 12, 1936) is an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California.