This HTML5 document contains 41 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n19https://web.archive.org/web/20070616230113/http:/web.phys.tue.nl/nl/de_faculteit/capaciteitsgroepen/plasmafysica_en_stralingstechnologie/plasma_amp_materials_processing/scientific_projects/ald/plasma_assisted_atomic_layer_deposition/
dcthttp://purl.org/dc/terms/
n15https://web.archive.org/web/20051101073358/http:/unit.aist.go.jp/digital-mfg/staff/hirose/
dbohttp://dbpedia.org/ontology/
foafhttp://xmlns.com/foaf/0.1/
n11https://global.dbpedia.org/id/
dbpedia-ruhttp://ru.dbpedia.org/resource/
dbthttp://dbpedia.org/resource/Template:
n4https://web.archive.org/web/20050729090958/http:/www.unifi.it/unifi/surfchem/solid/alenet/pub/
rdfshttp://www.w3.org/2000/01/rdf-schema#
freebasehttp://rdf.freebase.com/ns/
n9http://www.abc.chemistry.bsu.by/vi/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
owlhttp://www.w3.org/2002/07/owl#
wikipedia-enhttp://en.wikipedia.org/wiki/
dbchttp://dbpedia.org/resource/Category:
provhttp://www.w3.org/ns/prov#
dbphttp://dbpedia.org/property/
xsdhhttp://www.w3.org/2001/XMLSchema#
goldhttp://purl.org/linguistics/gold/
wikidatahttp://www.wikidata.org/entity/
dbrhttp://dbpedia.org/resource/
n22https://dx.doi.org/10.1088/0957-4484/10/1/

Statements

Subject Item
dbr:Atomic_layer_epitaxy
rdfs:label
Осаждение атомных слоёв Atomic layer epitaxy
rdfs:comment
Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with "dead" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.It is mostly used in semiconductor fabrication to grow thin films of thickness in the nanometer scale. Осаждение атомных слоёв, или атомно-слоевое осаждение; молекулярное наслаивание (англ. atomic layer deposition или англ. atomic layer epitaxy сокр., ALD; ALE) — технология нанесения тонких плёнок, основанная на последовательном использовании самоограниченных химических реакций для точного контроля толщины нанесённого слоя.
dct:subject
dbc:Finnish_inventions dbc:Thin_film_deposition
dbo:wikiPageID
3593667
dbo:wikiPageRevisionID
1021615665
dbo:wikiPageWikiLink
dbr:Adsorb dbr:Chemical_vapor_deposition dbc:Finnish_inventions dbr:Trimethylaluminium dbr:Zinc_sulfide dbr:Semiconductor_fabrication dbr:Monolayer dbr:Flat_panel_display dbr:Epitaxy dbr:Atomic_layer_deposition dbr:Millennium_Technology_Prize dbr:Electroluminescent_display dbr:Moore's_law dbc:Thin_film_deposition dbr:Tuomo_Suntola
dbo:wikiPageExternalLink
n4: n9:Te-Cu-Pb%20on%20Au.htm n15:Smoothing.pdf n19: n22:005
owl:sameAs
wikidata:Q4817336 n11:4TcMB freebase:m.09nmx1 dbpedia-ru:Осаждение_атомных_слоёв
dbp:wikiPageUsesTemplate
dbt:Use_dmy_dates dbt:Refimprove dbt:Reflist
dbo:abstract
Осаждение атомных слоёв, или атомно-слоевое осаждение; молекулярное наслаивание (англ. atomic layer deposition или англ. atomic layer epitaxy сокр., ALD; ALE) — технология нанесения тонких плёнок, основанная на последовательном использовании самоограниченных химических реакций для точного контроля толщины нанесённого слоя. Atomic layer epitaxy (ALE), more generally known as atomic layer deposition (ALD), is a specialized form of thin film growth (epitaxy) that typically deposit alternating monolayers of two elements onto a substrate. The crystal lattice structure achieved is thin, uniform, and aligned with the structure of the substrate. The reactants are brought to the substrate as alternating pulses with "dead" times in between. ALE makes use of the fact that the incoming material is bound strongly until all sites available for chemisorption are occupied. The dead times are used to flush the excess material.It is mostly used in semiconductor fabrication to grow thin films of thickness in the nanometer scale.
gold:hypernym
dbr:Form
prov:wasDerivedFrom
wikipedia-en:Atomic_layer_epitaxy?oldid=1021615665&ns=0
dbo:wikiPageLength
5286
foaf:isPrimaryTopicOf
wikipedia-en:Atomic_layer_epitaxy