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Statements

Subject Item
dbr:Thin-film_bulk_acoustic_resonator
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Ressonador acústic de pel·lícula fina FBAR-Technologie Thin-film bulk acoustic resonator
rdfs:comment
Bei der FBAR-Technologie (englisch (Thin) Film Bulk Acoustic Wave Resonator), die von der Firma Agilent Technologies entwickelt wurde, werden Resonator-Elemente auf einem Silizium-Die implementiert.Die Funktionsweise ist mit der eines Oberflächenwellenfilters (SAW-Filter) vergleichbar, jedoch mit dem Unterschied, dass bei der FBAR-Technik die Ausbreitung der akustischenWellen im Substrat („Bulk“) erfolgt. Aus dieser Technologie gehen die BAW-Filter hervor. A thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material manufactured by thin film methods between two conductive – typically metallic – electrodes and acoustically isolated from the surrounding medium. The operation is based on the piezoelectricity of the piezolayer between the electrodes.
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A thin-film bulk acoustic resonator (FBAR or TFBAR) is a device consisting of a piezoelectric material manufactured by thin film methods between two conductive – typically metallic – electrodes and acoustically isolated from the surrounding medium. The operation is based on the piezoelectricity of the piezolayer between the electrodes. FBAR devices using piezoelectric films with thicknesses ranging from several micrometres down to tens of micrometres resonate in the frequency range of 100 MHz to 20 GHz. FBAR or TFBAR resonators fall in the category of (BAW) and piezoelectric resonators and they are used in applications where high frequency, small size and weight is needed. Bei der FBAR-Technologie (englisch (Thin) Film Bulk Acoustic Wave Resonator), die von der Firma Agilent Technologies entwickelt wurde, werden Resonator-Elemente auf einem Silizium-Die implementiert.Die Funktionsweise ist mit der eines Oberflächenwellenfilters (SAW-Filter) vergleichbar, jedoch mit dem Unterschied, dass bei der FBAR-Technik die Ausbreitung der akustischenWellen im Substrat („Bulk“) erfolgt. Diese Technologie hat gegenüber den bisherigen Keramikresonatoren eine kleinere Einfügedämpfung und ein wesentliches Einsparungspotential in der Größe der Bauteile. Des Weiteren können mit dieser Technik Filter für Frequenzen ab ca. 1 GHz realisiert werden. Aus dieser Technologie gehen die BAW-Filter hervor.
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