About: Electrochemical RAM

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Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the channel is modulated by ionic exchange at the interface between the channel and the electrolyte upon application of an electric field. The charge-transfer process allows both for state retention in the absence of applied power, and for programming of multiple distinct levels, both differentiating ECRAM operation from that of a field-effect transistor (FET). The write operation is deterministic and can result in symmetrical potentiation and depression, making ECRAM

Attributes	Values
rdfs:label	Electrochemical RAM (en)
rdfs:comment	Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the channel is modulated by ionic exchange at the interface between the channel and the electrolyte upon application of an electric field. The charge-transfer process allows both for state retention in the absence of applied power, and for programming of multiple distinct levels, both differentiating ECRAM operation from that of a field-effect transistor (FET). The write operation is deterministic and can result in symmetrical potentiation and depression, making ECRAM (en)
foaf:depiction
dcterms:subject	Non-volatile memory Non-volatile random-access memory Types of RAM
Wikipage page ID	64305316 (xsd:integer)
Wikipage revision ID	1106012169 (xsd:integer)
Link from a Wikipage to another Wikipage	Sandia National Laboratories Electrochemical potential Electrochromic device Electrolyte Nanosecond Deep learning accelerator University of Massachusetts Amherst Von Neumann bottleneck Deep learning Massachusetts Institute of Technology Gate capacitance Ohm's law Open circuit potential Artificial neural networks Stanford University Front end of line Phase-change memory Non-volatile memory Logistic regression Phosphosilicate glass Non-volatile random-access memory Field-effect transistors Floating-point arithmetic Non-volatile memory Types of RAM High Bandwidth Memory International Business Machines Back end of line Artificial intelligence XOR gate Field-effect transistor Kirchhoff's circuit laws RRAM Multi-level cell IBM Research Very Large Scale Integration Resistive random-access memory BEOL Back-propagation Battery cell Analog computing In-memory computing Silicon wafer Heterogeneous integration High-K Metal Gate Deep neural networks Semiconductor foundry Nanosiemens
Link from a Wikipage to an external page	https://insidehpc.com/2019/05/sandia-powers-breakthroughs-in-neuromorphic-computing/ https://spectrum.ieee.org/tech-talk/semiconductors/devices/searching-for-the-perfect-neuron-for-ai https://news.stanford.edu/2019/04/25/fast-efficient-artificial-synapse-developed/ https://news.mit.edu/2020/ionic-device-brain-synapse-0619 https://www.ibm.com/blogs/research/2019/12/perfect-analog-material-system-ibm-iedm-neurips/
sameAs	Electrochemical RAM Electrochemical RAM
topics	yes (en)
dbp:wikiPageUsesTemplate	dbt:Chem dbt:Cite_web dbt:Clear dbt:Redirect dbt:Refbegin dbt:Refend dbt:Reflist dbt:Short_description dbt:Val dbt:Memory_types dbt:Emerging_technologies
thumbnail	wiki-commons:Special:FilePath/ECRAM_electrochemical_synaptic_cell.png?width=300
has abstract	Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts. The resistance of the channel is modulated by ionic exchange at the interface between the channel and the electrolyte upon application of an electric field. The charge-transfer process allows both for state retention in the absence of applied power, and for programming of multiple distinct levels, both differentiating ECRAM operation from that of a field-effect transistor (FET). The write operation is deterministic and can result in symmetrical potentiation and depression, making ECRAM arrays attractive for acting as artificial synaptic weights in physical implementations of artificial neural networks (ANN). The technological challenges include open circuit potential (OCP) and semiconductor foundry compatibility associated with energy materials. Universities, government laboratories, and corporate research teams have contributed to the development of ECRAM for analog computing. Notably, Sandia National Laboratories designed a lithium-based cell inspired by solid-state battery materials, Stanford University built an organic proton-based cell, and International Business Machines (IBM) demonstrated in-memory selector-free parallel programming for a logistic regression task in an array of metal-oxide ECRAM designed for insertion in the back end of line (BEOL). In 2022, researchers at Massachusetts Institute of Technology built an inorganic, CMOS-compatible protonic technology that achieved near-ideal modulation characteristics using nanosecond fast pulses (en)
infocom	yes (en)
prov:wasDerivedFrom	wikipedia-en:Electrochemical_RAM?oldid=1106012169&ns=0
page length (characters) of wiki page	22366 (xsd:nonNegativeInteger)
foaf:isPrimaryTopicOf	wikipedia-en:Electrochemical_RAM
is Link from a Wikipage to another Wikipage of	Electrochemical random-access memory Electrochemical synapse ECRAM
is Wikipage redirect of	Electrochemical random-access memory Electrochemical synapse ECRAM
is foaf:primaryTopic of	wikipedia-en:Electrochemical_RAM

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