About: Robert W. Bower     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:Wikicat21st-centuryPhysicists, within Data Space : dbpedia.demo.openlinksw.com associated with source document(s)
QRcode icon
http://dbpedia.demo.openlinksw.com/c/AEYs9JPHb2

Robert W. Bower (June 12, 1936) is an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California.

AttributesValues
rdf:type
rdfs:label
  • روبرت دبليو. باور (ar)
  • Robert W. Bower (de)
  • Robert W. Bower (en)
  • Robert W. Bower (pt)
  • 罗伯特·W·鲍尔 (zh)
rdfs:comment
  • روبرت دبليو. باور (بالإنجليزية: Robert W. Bower)‏ هو فيزيائي أمريكي، ولد في 12 يونيو 1936 في سانتا مونيكا في الولايات المتحدة. (ar)
  • Robert W. Bower (Santa Mônica, 12 de junho de 1936) é um físico estadunidense. (pt)
  • 罗伯特·W·鲍尔(英語:Robert W. Bower,1936年6月12日-)是美国应用物理学家,加州聖莫尼卡人,畢業於加州大学伯克利分校,先後在加利福尼亚理工学院獲得碩士及博士學位。1997年入選,1999年當選美国国家工程院院士。 (zh)
  • Robert W. Bower (* 12. Juni 1936 in Santa Monica, Kalifornien) ist ein US-amerikanischer Elektroingenieur und Hochschullehrer. 1954 bis 1958 diente er in der US Air Force. Er erlangte 1962 seinen Bachelor in Physik an der University of California in Berkeley, 1963 den Master of Engineering und 1973 den Ph. D. am California Institute of Technology. (de)
  • Robert W. Bower (June 12, 1936) is an American applied physicist. Immediately after receiving his Ph.D. from The California Institute of Technology in 1973, he worked for over 25 years in many different professions: Engineer, Scientist, Professor at University of California, Davis, and as president and CEO of Device Concept Inc. He also served as the President of Integrated Vertical Modules, which focused on three-dimensional, high-density structures. His most notable contribution, however, is his field-effect device with insulated gates—also known as a self-aligned-gate MOSFET (metal–oxide–semiconductor field-effect transistor), or SAGFET. Bower patented this design in 1969 while working at the Hughes Research Laboratories in Malibu, California. (en)
foaf:name
  • Robert W. Bower (en)
name
  • Robert W. Bower (en)
birth place
birth place
  • Santa Monica, California (en)
birth date
dct:subject
Wikipage page ID
Wikipage revision ID
Link from a Wikipage to another Wikipage
Link from a Wikipage to an external page
sameAs
Faceted Search & Find service v1.17_git147 as of Sep 06 2024


Alternative Linked Data Documents: ODE     Content Formats:   [cxml] [csv]     RDF   [text] [turtle] [ld+json] [rdf+json] [rdf+xml]     ODATA   [atom+xml] [odata+json]     Microdata   [microdata+json] [html]    About   
This material is Open Knowledge   W3C Semantic Web Technology [RDF Data] Valid XHTML + RDFa
OpenLink Virtuoso version 08.03.3331 as of Sep 2 2024, on Linux (x86_64-generic-linux-glibc212), Single-Server Edition (378 GB total memory, 51 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software