About: Self-aligned gate

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In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing feature whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s. Self-aligned gates are still used in most modern integrated circuit processes.

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rdf:type	Thing work yago:WikicatSemiconductors yago:Abstraction100002137 yago:Conductor114821043 yago:Material114580897 yago:Matter100020827 yago:Part113809207 yago:PhysicalEntity100001930 yago:Relation100031921 yago:Semiconductor114821248 yago:Substance100019613
rdfs:label	Porta autoalineada (ca) Self-aligned gate (fr) 自己整合ゲート (ja) Self-aligned gate (en)
rdfs:comment	Une self-aligned gate (qu'on pourrait traduire de l'anglais par « grille auto-alignée ») est un procédé de fabrication de transistor MOSFET dans lequel la grille, très dopée, est utilisée en tant que masque pour le dopage de la source et du drain qui l'entourent. Grâce à cette technique, la grille chevauche toujours les bords de la source et du drain, ce qui est indispensable au bon fonctionnement du transistor MOSFET. La technique de self-aligned gate est née en 1966, et fut brevetée aux États-Unis en octobre 1969. (fr) In semiconductor electronics fabrication technology, a self-aligned gate is a transistor manufacturing feature whereby the gate electrode of a MOSFET (metal–oxide–semiconductor field-effect transistor) is used as a mask for the doping of the source and drain regions. This technique ensures that the gate is naturally and precisely aligned to the edges of the source and drain. The use of self-aligned gates in MOS transistors is one of the key innovations that led to the large increase in computing power in the 1970s. Self-aligned gates are still used in most modern integrated circuit processes. (en) 電子工学において自己整合ゲートとは、MOSFETの耐熱性の高いゲート電極を、ソース/ドレイン領域をドーピングする際のマスクとして使うトランジスタ製造技術である。この技術を使うことで、ゲートとソース/ドレインとの重なりがわずかになる。自己整合ゲートの使用は、1970年代の計算能力の大幅な向上につながった発明の１つである。自己整合ゲートは未だに多くの現代的な集積回路プロセスで使われている。 (ja)
rdfs:seeAlso	Polysilicon depletion effect
foaf:depiction
dcterms:subject	Italian inventions MOSFETs 1966 introductions Transistor types
Wikipage page ID	7876376 (xsd:integer)
Wikipage revision ID	1105225191 (xsd:integer)
Link from a Wikipage to another Wikipage	Amorphous silicon Italian inventions Robert W. Bower Bell Labs Dawon Kahng Hydrofluoric acid Charge-coupled device Doping (semiconductor) Integrated circuit dbr:Molybdenum Masatoshi Shima Chemical vapor deposition Gate oxide Low threshold voltage Annealing by short circuit MOSFET MOS integrated circuit MOS transistor Static random-access memory Microfabrication Wafer (electronics) Ion implantation Aluminum MOSFETs Fairchild Semiconductor Federico Faggin Drain (transistor) Semiconductor device fabrication Gate (transistor) Metal gate Photoresist 1966 introductions Bipolar junction transistor Transistor Photolithography Transistor types Marcian Hoff Fairchild Camera and Instrument Corporation Intel Intel 4004 Microprocessor Random-access memory Work function Photomask Semiconductor industry Silicon Ultraviolet IEEE Spectrum High threshold voltage Thermal oxidation Polycrystalline silicon Parasitic capacitance Polysilicon Mohamed Atalla Source (transistor) Les Vadasz Silicon gate Aluminum-gate Memory chip Stan Mazor Ultra-violet light
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sameAs	Self-aligned gate Self-aligned gate Self-aligned gate Self-aligned gate Self-aligned gate Self-aligned gate Self-aligned gate

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